symbol v ds v gs i dm i ar e ar t j , t stg parameter symbol typ max t 10s 32 40 steady state 60 75 steady state r q jl 17 24 a mj c -55 to 150 -20 60 w 25 -80 a v -10.5 -8 3.1 2.0 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a c/w r q ja -30 absolute maximum ratings t a =25c unless otherwise noted continuous drain current a units parameter t a =25c t a =70c v maximum i d gate-source voltage p d power dissipation a t a =25c drain-source voltage pulsed drain current b junction and storage temperature range t a =70c avalanche current b repetitive avalanche energy 0.3mh b AO4435 v ds = -30v i d = -10.5a (v gs = -20v) r ds(on) < 14m (v gs = -20v) r ds(on) < 18m (v gs = -10v) r ds(on) < 36m (v gs = -5v) the AO4435 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. soic-8 g d s www.freescale.net.cn 1/5 30v p-channel mosfet general description features
symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 100 na v gs(th) -1.7 -2.3 -3 v i d(on) -80 a 11 14 t j =125c 15 19 15 18 27 36 g fs 22 s v sd -0.74 -1 v i s -3.5 a c iss 1130 1400 pf c oss 240 pf c rss 155 pf r g 1 5.8 8 w q g(10v) 18 24 nc q g(4.5v) 9.5 q gs 5.5 nc q gd 3.3 nc t d(on) 8.7 ns t r 8.5 ns t d(off) 18 ns t f 7 ns t rr 25 30 ns q rr 12 nc v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time total gate charge turn-off delaytime v gs =-10v, v ds =-15v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime m w switching parameters gate source charge gate drain charge total gate charge v gs =-10v, v ds =-15v, i d =-10a dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz i s = -1a,v gs = 0v v ds = -5v, i d = -10a v gs = -5v, i d = -5a v gs = -10v, i d = -10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds = v gs i d = -250 m a v ds = -30v, v gs = 0v v ds = 0v, v gs = 25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-10a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d = -250 m a, v gs = 0v v gs = -10v, v ds = -5v v gs = -20v, i d = -11a reverse transfer capacitance i f =-10a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a = 25c. the value in any given application depends on the u ser's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev7: nov. 2010 www.freescale.net.cn 2/5 AO4435 30v p-channel mosfet
typical electrical and thermal characteristics 0 20 40 60 80 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -6v -8v -10v -4.5v 0 20 40 60 80 0 1 2 3 4 5 6 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds = -5v 5 10 15 20 25 30 35 40 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =-10v v gs =-5v v gs =-20v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 5 15 25 35 45 55 2 4 6 8 10 12 14 16 18 20 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d =-11a 25c 125c v gs = -4v v gs =-10v i d =-10a v gs =-5v i d =-5a v gs =-20v i d =-11a www.freescale.net.cn 3/5 AO4435 30v p-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds =-15v i d =-10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4/5 AO4435 30v p-channel mosfet
vd c ig vds d u t vd c v gs vgs q g q gs qgd c harge g ate c harge test c ircuit & w aveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 5/5 AO4435 30v p-channel mosfet
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